Cadmium zinc telluride (CdZnTe) semiconductor has applications in the detection\nof X-rays and gamma-rays at room temperature without having to use\na cooling system. Chemical etching and chemo-mechanical polishing are\nprocesses used to smoothen CdZnTe wafer during detector device fabrication.\nThese processes reduce surface damages left after polishing the wafers.\nIn this paper, we compare the effects of etching and chemo-mechanical polishing\non CdZnTe nuclear detectors, using a solution of hydrogen bromide\nin hydrogen peroxide and ethylene glycol mixture. X-ray photoelectron spectroscopy\n(XPS) was used to monitor TeO2 on the wafer surfaces. Currentvoltage\nand detector-response measurements were made to study the electrical\nproperties and energy resolution. XPS results showed that the chemical\netching process resulted in the formation of more TeO2 on the detector surfaces\ncompared to chemo-mechanical polishing.......................
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